Monday, April 8, 2013

Magneto-electrics, pathway for future computer memory

The new method of ‘magneto-electrics’ is rolled forward to bring about change in computer technology.  The U.S. Department of Energy’s Argonne National Laboratory physicists developed new ways of controlling magnetic materials.  The word ‘magneto-electrics’ comes from the intermingling of magnetic and electric fields.  Physicist Philip Ryan said “Electricity and magnetism are intrinsically coupled – they are of the same entity”.  They took the base compound of EuTiO3 (europium-titanium oxide) suitable for their experiment.  This can be the greatest innovation in developing next level computers with advanced memory storage, magnetic sensors and other advanced applications that were thought of.


This experimentation is still in the baby stage.  The scientists still need to inculcate their findings in commercial devices.  Today computers have electric memories that write data fast and efficient.  Magnetic memories take less energy and are extraordinarily fast.  Ryan said, “The more we learn about magneto-electrics, the more we open up this space that gives us the best of both worlds”.   There is a possibility for engineers to use this technology in the future to create non-binary memories.